Phonons inSi24at simultaneously elevated temperature and pressure
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منابع مشابه
Phonons in Si24 at simultaneously elevated temperature and pressure
Raman spectroscopy was used to measure the frequencies of phonons in Si24 with an open clathrate structure at temperatures from 80 to 400 K with simultaneous pressures of 0 to 8 GPa. The frequency shifts of the different phonons were substantially different under either temperature or pressure. The quasiharmonic behavior was isolated by varying pressure at low temperatures, and the anharmonic b...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2017
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.95.094306